June 16, 2022 - Announced at 2022 Symposium on VLSI: Achieving 5.9 ns Random Read Access and 5.8 MB/s Write Throughput on Test Chip
Renesas announced that it has developed circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM, hereinafter MRAM) test chip with fast read and write operations fabricated using a 22-nm process. The test chip includes a 32-megabit (Mbit) embedded MRAM memory cell array and achieves 5.9-nanosecond (ns) random read access at a maximum junction temperature of 150°C, and a write throughput of 5.8-megabyte-per-second (MB/s).
