(phys.org April 29) Magnetic random-access memory (MRAM) technology offers substantial potential towards next-generation universal memory architecture. However, state-of-the-art MRAMs are still fundamentally constrained by a sub-nanosecond speed limitation, which has remained a long-lasting scientific challenge in the spintronics R&D. In this double doctorate project, Luding Wang from the research group Physics of Nanostructures at the department of Applied Physics at Eindhoven University of Technology and Dr. Weisheng Zhao of the Fert Beijing Institute of Beihang University, experimentally demonstrated a fully-functional picosecond opto-MRAM building block device, by integrating ultrafast photonics with spintronics.
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